Seong, Tae-Geun Kim, Jin-Seong Cho, Kyung-Hoon Yang, Min Kyu Kim, Woong Lee, Jeon-Kook Moon, Ji Won Roh, Jaesung Nahm, Sahm 2024-01-20T18:03:12Z 2024-01-20T18:03:12Z 2021-09-05 2010-12 0021-4922 https://pubs.kist.re.kr/handle/201004/130860 NiO films were grown on a Pt substrate by radio frequency (RF) magnetron sputtering using a NiO ceramic target. A crystalline NiO phase with the [111] preferred orientation was formed for the films grown above 100 degrees C. Resistance switching behavior was not observed in the NiO films annealed in the air or in ambient O(2) after film deposition. However, the NiO films annealed in ambient N(2) exhibited resistance switching properties. The stability of the switching voltage was considerably influenced by the oxygen to argon ratio during film growth. In particular, the NiO film grown under an 8.0 mTorr oxygen partial pressure exhibited stabilized switching voltages (V(set) similar to 1.45 +/- 0.20 V and V(reset) similar to 0.62 +/- 0.09 V). Therefore, the control of the ambient gas pressure during the growth and annealing of the NiO films was important for obtaining good resistance switching properties. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.121103 English JAPAN SOC APPLIED PHYSICS MEMORY APPLICATIONS CURRENT-VOLTAGE TEMPERATURE JUNCTION Effects of Ambient Gas Pressure on the Resistance Switching Properties of the NiO Thin Films Grown by Radio Frequency Magnetron Sputtering Article 10.1143/JJAP.49.121103 1 JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.12 JAPANESE JOURNAL OF APPLIED PHYSICS 49 12 scie scopus 000285632400009 2-s2.0-79551635697 Physics, Applied Physics Article MEMORY APPLICATIONS CURRENT-VOLTAGE TEMPERATURE JUNCTION resistance switching NiO gas prossure