Kim, Kyung Ho Kim, Hyung-jun Koo, Hyun Cheol Han, Suk-hee 2024-01-20T18:03:16Z 2024-01-20T18:03:16Z 2021-09-05 2010-12 0374-4884 https://pubs.kist.re.kr/handle/201004/130864 The electric-field-induced spin-orbit interaction (SOT) has been examined in double-sided doped quantum-well (QW) structures in which two different QWs of In0.53Ga0.47As (16 nm) or In0.53Ga0.47As (8 nm)/InAs (3 nm)/In0.53Ga0.47As (8 nm) are employed. Two separated carrier supply layers of different doping concentrations generate an asymmetric potential gradient in the QW, resulting in a structure-induced Rashba spin-splitting. By analyzing the Shubnikov-de Hass oscillation, the two different QWs are found to represent opposite SOT parameter (alpha) variations with respect to the gate electric field, which can be explained by the conduction band potential gradient and the charge distribution of the QWs. The In As-inserted In0.53Ga0.47As QW exhibits an exclusively negative gradient while the In0.53Ga0.47As QW exhibits positive gradients on the side of the gate electrode. English KOREAN PHYSICAL SOC MOBILITY Manipulation of the Rashba Spin-orbit Interaction in Double-sided doped In0.53Ga047As/InAs Quantum-well Structures Article 10.3938/jkps.57.1946 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.57, no.6, pp.1946 - 1949 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 57 6 1946 1949 scie scopus kci ART001502143 000285486200086 2-s2.0-78650320704 Physics, Multidisciplinary Physics Article MOBILITY Rashba spin-orbit interaction Quantum-well structure Shubnikov-de Hass oscillation Spin field effect transistor Gate modulation