Choi, Sun Young Yang, Min Kyu Kim, Sangsig Lee, Jeon-Kook 2024-01-20T18:03:50Z 2024-01-20T18:03:50Z 2021-09-04 2010-12 1862-6254 https://pubs.kist.re.kr/handle/201004/130892 The reliable resistive switching properties of TiN/TaOxPt structures fabricated with a fully room-temperature process are demonstrated in this letter. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to 10(5) cycles. No data loss was reported upon continuous read-out for more than 10(4) at 125 degrees C. Multilevel storage is feasible due to the dependence of the low resistance state (LRS) on the initial "SET" (switch from high to low RS) compliance current. The values of LRS showed no dependence on the size of the device, which correlated with the localized conductive filament mechanism. This nonvolatile multilevel memory effect and the fully room-temperature fabrication process make the TiN/TaOx/Pt memory devices promising for future nonvolatile memory application. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim English WILEY-BLACKWELL RESISTIVE SWITCHING PROPERTIES Fully room-temperature-fabricated TiN/TaOx/Pt nonvolatile memory devices Article 10.1002/pssr.201004388 1 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.4, no.12, pp.359 - 361 PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 4 12 359 361 scie scopus 000286041300007 2-s2.0-78650159107 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article RESISTIVE SWITCHING PROPERTIES resistive switching non-volatile memory TaOx TiN transition metal oxides