Laloe, J-B Hickey, M. C. Chang, J. Moodera, J. S. 2024-01-20T18:04:11Z 2024-01-20T18:04:11Z 2021-09-04 2010-11-29 0003-6951 https://pubs.kist.re.kr/handle/201004/130906 We investigated interface and electrical properties of Ge-based Schottky and tunnel diodes with crystalline MgO barriers. Following a simple cleaning procedure not requiring a high-temperature anneal, x-ray data indicated smooth interfaces and that the MgO tunnel barrier was highly textured. Transport characteristics were fitted using a self-consistent field Simmons-Schottky current-voltage model, yielding the Schottky and tunnel barrier heights for the devices and the distribution of tunneling currents. Considering the Fermi-level depinning and the ratio of Schottky to tunneling currents for each barrier thickness, we find that a MgO thickness of 15 angstrom yields the best transport properties in this system. (C) 2010 American Institute of Physics. [doi:10.1063/1.3518071] English AMER INST PHYSICS Schottky and tunneling behavior of Fe/MgO/Ge(100) structures Article 10.1063/1.3518071 1 APPLIED PHYSICS LETTERS, v.97, no.22 APPLIED PHYSICS LETTERS 97 22 scie scopus 000284965000036 2-s2.0-78650636802 Physics, Applied Physics Article Schottky barrier Tunneling transport spin injection Ge