Han, J. H. No, Y. S. Lee, J. Y. Kim, T. W. Kim, J. Y. Choi, W. K. 2024-01-20T18:05:08Z 2024-01-20T18:05:08Z 2021-09-05 2010-11 1386-9477 https://pubs.kist.re.kr/handle/201004/130951 Transmission electron microscopy (TEM) images for the Al-doped ZnO (AZO) films grown on n-Si (1 0 0) substrates and annealed for 10 min at 900 and 1000 degrees C showed that an amorphous phase region appeared in the grain boundaries of the AZO thin films by tilting the TEM specimen and that the amorphous phase did not show the constrast variation with change in the zone axis of the specimen. High-resolution TEM images revealed that the single grains existing around the amorphous region contained a higher dislocation density in comparison with the polycrystalline region. Hall effect results showed that the mobility of the annealed AZO thin films was smaller than that of the as-grown AZO thin films and that the resistivity of the annealed AZO thin films was larger than that of the as-grown AZO thin films. (C) 2010 Elsevier B.V. All rights reserved. English ELSEVIER ZINC-OXIDE EPITAXY Effect of thermal annealing on the microstructural and electrical properties of Al-doped ZnO thin films grown on n-Si (100) substrates Article 10.1016/j.physe.2010.07.019 1 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.43, no.1, pp.256 - 260 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 43 1 256 260 scie scopus 000285485600048 2-s2.0-78649930473 Nanoscience & Nanotechnology Physics, Condensed Matter Science & Technology - Other Topics Physics Article ZINC-OXIDE EPITAXY thermal annealing Al-ZnO microstructure *2010개인평가에반영완료