Yang, Min Kyu Jung, Kyooho Kim, Yongmin Ko, Tae Kuk Im, Hyunsik Park, Jae-Wan Lee, Jeon-Kook 2024-01-20T18:30:22Z 2024-01-20T18:30:22Z 2021-09-05 2010-11 0021-4922 https://pubs.kist.re.kr/handle/201004/130966 The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO3/SrRuO3 device has been investigated using pulse voltage The required switching time between high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width The resistance switching is found to be less dependent on the pulse height in the short pulse region. For LRS -> HRS and HRS -> LRS switching minimum switching times of similar to 500 and similar to 100 ns are required respectively at a pulse height above the dc switching voltage The authors attribute the distinction in the switching time to different switching mechanisms (C) 2010 Japan Society of Applied Physics English IOP PUBLISHING LTD Voltage-Pulse Induced Resistance Switching Characteristics in a Cr-Doped SrZrO3 Article 10.1143/JJAP.49.111101 1 JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.11 JAPANESE JOURNAL OF APPLIED PHYSICS 49 11 scie scopus 000285040800013 2-s2.0-79551626648 Physics, Applied Physics Article Cr doped SrZrO3 resisive switching voltage pulse output current