Lee, Y.-K. Park, J.-H. Choi, Y.-J. Park, J.-G. 2024-01-20T18:30:49Z 2024-01-20T18:30:49Z 2021-09-02 2010-11 1229-7801 https://pubs.kist.re.kr/handle/201004/130987 We synthesized ZnO nanowires patterned on Si substrate and investigated the field emission properties of the nanowires. Firstly, Au catalyst layers were fabricated on Si substrate by photo-lithography and lift-off process. The diameter of Au pattern was 50 urn and the pattern was arrayed as 4×4. ZnO nanowires were grown on the Au catalyst pattern by the aid of Au liquid phase. The orientation of the ZnO nanowires was vertical on the whole. Sufficient brightness was obtained when the electric field was 5.4 V/um and the emission current was 5 m A/cm2 . The threshold electric field was 5.4 V/μm in the 4×4 array of ZnO nanowires, which is quite lower than that of the nanowires grown on the flat Si substrate. The lower threshold electric field of the patterned ZnO nanowires could be attributed to their vertical orientation of the ZnO nanowires. Korean AU catalysts Emission current FED Field emission property Lift-off process Liquid Phase Nanowlre Patterned growth Patterning Semiconducting nanowires Si substrates Threshold electric fields ZnO ZnO nanowires Catalysts Electric fields Field emission Field emission displays Nanowires Semiconductor growth Silicon Zinc oxide Electric wire Patterned growth of ZnO semiconducting nanowires and its field emission properties Article 10.4191/KCERS.2010.47.6.623 1 Journal of the Korean Ceramic Society, v.47, no.6, pp.623 - 626 Journal of the Korean Ceramic Society 47 6 623 626 scopus kci ART001496985 2-s2.0-78751475639 Article AU catalysts Emission current FED Field emission property Lift-off process Liquid Phase Nanowlre Patterned growth Patterning Semiconducting nanowires Si substrates Threshold electric fields ZnO ZnO nanowires Catalysts Electric fields Field emission Field emission displays Nanowires Semiconductor growth Silicon Zinc oxide Electric wire FED Field emission display Nanowlre Patterning ZnO