Kim, Chang-Hoon Lee, Wook-Seong Choi, Yang-Kyu 2024-01-20T18:32:13Z 2024-01-20T18:32:13Z 2021-09-05 2010-10 0741-3106 https://pubs.kist.re.kr/handle/201004/131055 A nanocrystalline diamond gate field-effect transistor (FET) is demonstrated for the improvement of ON-state current with a CMOS-compatible process. A nanocrystalline diamond film was deposited on a Si3N4/SiO2 gate dielectric as a gate material. The diamond thin film served as a gate electrode; hence, an n-channel FET was successfully demonstrated. As a control group, a polysilicon gate FET with the same structure was also fabricated. Compared to the polysilicon gate FET, the diamond gate FET showed doubled ON-state current, which was primarily attributed to the strain effect of the diamond gate acting on the channel. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Nanocrystalline Diamond Gate FET for ON-State Current Improvement Article 10.1109/LED.2010.2058992 1 IEEE ELECTRON DEVICE LETTERS, v.31, no.10, pp.1152 - 1154 IEEE ELECTRON DEVICE LETTERS 31 10 1152 1154 N scie scopus 000283353900028 2-s2.0-77957568855 Engineering, Electrical & Electronic Engineering Article Diamond gate high-performance field-effect transistor nanocrystalline diamond strain effect stress effect