Kim, W. M. Kim, Y. H. Kim, J. S. Jeong, J. Baik, Y-J Park, J-K Lee, K. S. Seong, T-Y 2024-01-20T18:33:20Z 2024-01-20T18:33:20Z 2021-09-04 2010-09-15 0022-3727 https://pubs.kist.re.kr/handle/201004/131105 The influence and the states of hydrogen in polycrystalline ZnO thin films were investigated by preparing films with different amounts of oxygen vacancies at various hydrogen potentials. The most notable effect of hydrogen addition was passivation of grain boundaries. The majority of hydrogen incorporation in polycrystalline ZnO films was attributed to hydrogen interstitials, and a substantially smaller number of multicentre bonds at oxygen vacancies were formed even at high hydrogen potentials. The major source of free carriers in polycrystalline ZnO films deposited without intentional hydrogen addition was oxygen vacancies with 2+ charge state with large atomic relaxation. English IOP PUBLISHING LTD ELECTRICAL-PROPERTIES OXIDE-FILMS ZINC-OXIDE TRANSPARENT TRANSPORT Hydrogen in polycrystalline ZnO thin films Article 10.1088/0022-3727/43/36/365406 1 JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.43, no.36 JOURNAL OF PHYSICS D-APPLIED PHYSICS 43 36 scie scopus 000281254300018 2-s2.0-78249274588 Physics, Applied Physics Article ELECTRICAL-PROPERTIES OXIDE-FILMS ZINC-OXIDE TRANSPARENT TRANSPORT polycrystalline ZnO thin film hydrogen transparent conducting oxide