Kim, Jaesu Jo, Byounggu Lee, Kwang-Jae Park, Dongwoo Lee, Cheul-Ro Kim, Jin Soo Jeong, Mun Seok Byeon, Clare Chisu Kang, Hoonsoo Kim, Jong Su Song, Jin Dong Choi, Won Jun Il Lee, Jung Lee, Sang Jun Noh, Sam Kyu Oh, Dae Kon Leem, Jae-Young 2024-01-20T18:33:32Z 2024-01-20T18:33:32Z 2021-09-05 2010-09-01 0040-6090 https://pubs.kist.re.kr/handle/201004/131113 We report the influences of growth parameters on the characteristics of GaAs quantum rings (QRs) and quantum dots (QDs) formed on AlGaAs/GaAs by the droplet epitaxy (DE) method. After forming Ga droplets on the AlGaAs/GaAs surface, varying amounts of arsenic (As) flux were introduced to fabricate the GaAs quantum structures. By decreasing the As flux from 8 x 10(-5) to 3 x 10(-5) Torr, the shape of the GaAs quantum structures was changed from QDs to elongated QRs. With further decreasing As flux, the shape of the elongated QRs became symmetric. The formation characteristics of the GaAs QRs from the QDs with the amount of As flux were discussed in terms of migration behaviors of the gallium (Ga) atoms on the GaAs (001)-c(4 x 4) surface. The effects of the amount of Ga supply and the growth temperature for the deposition of Ga droplets on the formation of the GaAs quantum structures were also considered. (C) 2010 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA DROPLET EPITAXY DOTS Different shape of GaAs quantum structures under various growth conditions Article 10.1016/j.tsf.2010.03.151 1 THIN SOLID FILMS, v.518, no.22, pp.6500 - 6504 THIN SOLID FILMS 518 22 6500 6504 scie scopus 000282242600079 2-s2.0-77956057948 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper DROPLET EPITAXY DOTS Quantum dot Quantum ring Growth conditions