Cho, Kwang-Hwan Kang, Min-Gyu Oh, Seung-Min Kang, Chong-Yun Lee, YoungPak Yoon, Seok-Jin 2024-01-20T18:33:33Z 2024-01-20T18:33:33Z 2021-09-05 2010-09-01 0040-6090 https://pubs.kist.re.kr/handle/201004/131114 We report the fabrication of ZnO based thin-film transistors (TFTs) with high-k gate insulator of Ti-substituted Bi1.5ZnNb1.5O7 (BZN) films. (Bi1.5Zn0.5)(Zn0.4NB1.43Ti0.3O7) film deposited on Pt/Ti/SiO2/Si substrate by pulsed laser deposition at room temperature exhibits high dielectric constant of 73 at 100 kHz, while BZN film shows much lower dielectric constant of 50, respectively. The increasing dielectric constant with increasing Ti substitution can be attributed to the presence of a highly polarizable TiO6 octahedra and its strong correlation with the NbO6 octahedra. All room temperature processed ZnO based TFTs using Ti-substituted BZN gate insulator exhibited filed effect mobility of 0.75 cm(2)/Vs and low voltage device performance less than 2.5 V. (c) 2010 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA DIELECTRIC-PROPERTIES ORGANIC TRANSISTORS PYROCHLORE GLASS Low voltage ZnO thin-film transistors with Ti-substituted BZN gate insulator for flexible electronics Article 10.1016/j.tsf.2010.03.061 1 THIN SOLID FILMS, v.518, no.22, pp.6277 - 6279 THIN SOLID FILMS 518 22 6277 6279 scie scopus 000282242600029 2-s2.0-77956056046 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper DIELECTRIC-PROPERTIES ORGANIC TRANSISTORS PYROCHLORE GLASS ZnO based thin-film transistors (TFTs) Ti-substituted Bi1.5ZnNb1.5O7 Gate insulator