Xiao, Yu Bin Kim, Eun Ho Kong, Seon Mi Park, Jae Hyun Min, Byoung Chul Chung, Chee Won 2024-01-20T18:33:56Z 2024-01-20T18:33:56Z 2021-09-05 2010-09 0042-207X https://pubs.kist.re.kr/handle/201004/131132 Inductively coupled plasma reactive ion etching of titanium thin films patterned with a photoresist using Cl-2/Ar gas was examined. The etch rates of the titanium thin films increased with increasing the Cl-2 concentration but the etch profiles varied. In addition, the effects of the coil rf power, dc-bias voltage and gas pressure on the etch rate and etch profile were investigated. The etch rate increased with increasing coil rf power, dc-bias voltage and gas pressure. The degree of anisotropy in the etched titanium films improved with increasing coil rf power and dc-bias voltage and decreasing gas pressure. X-ray photoelectron spectroscopy revealed the formation of titanium compounds during etching, indicating that Ti films etching proceeds by a reactive ion etching mechanism. (C) 2010 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD Inductively coupled plasma reactive ion etching of titanium thin films using a Cl-2/Ar gas Article 10.1016/j.vacuum.2010.08.006 1 VACUUM, v.85, no.3, pp.434 - 438 VACUUM 85 3 434 438 scie scopus 000283971000014 2-s2.0-77957753196 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article CONTAINING FEEDS TI MASK CHLORINE Titanium Inductively coupled plasma reactive ion etching Cl-2/Ar Hard mask