Kim, Dong Hun Seo, Hyungtak Chung, Kwun-Bum Cho, Nam Gyu Kim, Ho-Gi Kim, Il-Doo 2024-01-20T19:00:48Z 2024-01-20T19:00:48Z 2021-09-04 2010-08 0013-4651 https://pubs.kist.re.kr/handle/201004/131230 This study reports the dielectric and leakage current properties of Mg2Hf5O12 thin films deposited at room temperature by radio-frequency magnetron sputtering. Polycrystalline Mg2Hf5O12 thin films showed a reasonably high dielectric constant (epsilon(r) = 22) and greatly enhanced leakage current characteristics (<2 x 10(-7) A/cm(2)) compared to the leakage current (similar to 2 x 10(-5) A/cm(2)) of HfO2 thin films at 0.4 MV/cm. A bandedge spectroscopic analysis revealed lower conduction bandedge defect states and a greater p-type-like Fermi energy level of Mg2Hf5O12 compared to the HfO2 thin films. The suitability of Mg2Hf5O12 films as gate insulators for low voltage operating InGaZnO4 thin film transistors (TFTs) was investigated. All room-temperature processed InGaZnO4 TFTs on plastic substrates exhibited a high field effect mobility of 27.32 cm(2)/Vs and a current on/off ratio of 4.01 x 10(6). The threshold voltage and subthreshold swing were 2 V and 440 mV/dec, respectively. The fabrication and compositional manipulation method of the Mg2Hf5O12 films described in this work is simple and versatile, providing fascinating opportunities for new high-k gate dielectrics. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3465656] All rights reserved. English ELECTROCHEMICAL SOC INC VOLTAGE ORGANIC TRANSISTORS InGaZnO4-Based Thin Film Transistors Using Room-Temperature Grown Mg2Hf5O12 Gate Insulator Article 10.1149/1.3465656 1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.10, pp.H964 - H968 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157 10 H964 H968 scie scopus 000281306900079 2-s2.0-77956212266 Electrochemistry Materials Science, Coatings & Films Electrochemistry Materials Science Article VOLTAGE ORGANIC TRANSISTORS