Na, Kwang Duk Kim, Jeong Hwan Park, Tae Joo Song, Jaewon Hwang, Cheol Seong Choi, Jung-Hae 2024-01-20T19:01:34Z 2024-01-20T19:01:34Z 2021-09-02 2010-07-01 0040-6090 https://pubs.kist.re.kr/handle/201004/131266 Metal-insulator-semiconductor capacitors were fabricated with sputtered ZnO and atomic layer deposited HfO2 as the semiconductor and gate dielectric layers, respectively. From the capacitance-voltage measurements, it was confirmed that pre-deposition annealing of the sputtered ZnO layer at 300 degrees C in air greatly decreased the interfacial trap density (similar to 2 x 10(12) cm(-2) eV(-1)), X-ray photoelectron spectroscopy showed a decrease in the OH bonds adsorbed on the ZnO surface after pre-deposition annealing, which improved the interface property. A very small capacitance equivalent thickness of 1.3 nm was achieved, which decreased the operation voltage (<5V) of the device significantly. (C) 2010 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA OXIDE TRANSISTORS DEPOSITION MOBILITY Improved properties of Pt-HfO2 gate insulator-ZnO semiconductor thin film structure by annealing of ZnO layer Article 10.1016/j.tsf.2010.04.004 1 THIN SOLID FILMS, v.518, no.18, pp.5326 - 5330 THIN SOLID FILMS 518 18 5326 5330 scie scopus 000279659900050 2-s2.0-77955662064 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article OXIDE TRANSISTORS DEPOSITION MOBILITY Zinc oxide Hafnium oxide High-k dielectrics Oxide semiconductor Metal-insulator-semiconductor capacitor Annealing Sputtering Atomic layer deposition