Shon, Yoon Lee, Sejoon Kang, Tae Won Lee, Youngmin Lee, Seung-Woong Song, Jin Dong Kim, Hyung-Jun Lee, Jeong Ju Yoon, Im Taek 2024-01-20T19:01:35Z 2024-01-20T19:01:35Z 2021-09-02 2010-07-01 0022-0248 https://pubs.kist.re.kr/handle/201004/131267 The p-type InMnP:Be epilayers, which were prepared by thermal diffusion of Mn through in-situ deposition of Mn layer using molecular beam epitaxy (MBE) onto MBE-grown InP:Be epilayers and subsequent in-situ annealing at 300-350 degrees C, were investigated. InMnP:Be epilayers prepared by the above sequence clearly showed the Mn-related emission band at 1.1-1.2 eV, which indicates the effective incorporation of Mn2+ ions into the host layer InP:Be. The samples demonstrated very large ferromagnetic hysteresis loops with enhanced coercivity, and the ferromagnetic-to-paramagnetic transition of the samples was observed to occur at similar to 85 K. These results suggest that InP-based ferromagnetic semiconductor layers having enhanced ferromagnetism can be effectively formed by the above-mentioned sequential in-situ processes. (C) 2010 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV INP SEMICONDUCTORS SPINTRONICS MN Enlarged ferromagnetic hysteresis in InMnP:Be epilayers formed by thermal diffusion using MBE-grown Mn/InP:Be bilayers Article 10.1016/j.jcrysgro.2010.04.026 1 JOURNAL OF CRYSTAL GROWTH, v.312, no.14, pp.2069 - 2072 JOURNAL OF CRYSTAL GROWTH 312 14 2069 2072 scie scopus 000279363500008 2-s2.0-77955231116 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article INP SEMICONDUCTORS SPINTRONICS MN Diffusion Molecular beam epitaxy Manganites Magnetic materials Semiconducting indium phosphide