Jeon, Kun-Rok Min, Byoung-Chul Lee, Hun-Sung Shin, Il-Jae Park, Chang-Yup Shin, Sung-Chul 2024-01-20T19:01:52Z 2024-01-20T19:01:52Z 2021-09-05 2010-07 0003-6951 https://pubs.kist.re.kr/handle/201004/131281 We report the proper resistance-area products in the single crystalline bcc CoFe/MgO tunnel contact on nondegenerate n-Ge desirable for efficient spin injection and detection at room temperature. The electric properties of the single crystalline CoFe(5.0 nm) / MgO / n-Ge(001) tunnel contacts with an ultrathin MgO thickness of 1.5, 2.0, and 2.5 nm have been investigated by the I-V-T and C-V measurements. Interestingly, the crystalline tunnel contact with the 2.0-nm MgO exhibits the Ohmic behavior with the RA products of 5.20 X 10(-6) / 1.04 X 10(-5) Omega m(2) at +/- 0.25 V, satisfying the theoretical conditions required for significant spin injection and detection. We believe that the results are ascribed to the presence of MgO layer between CoFe and n-Ge, enhancing the Schottky pinning parameter as well as shifting the charge neutrality level. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3454276] English AMER INST PHYSICS Single crystalline CoFe/MgO tunnel contact on nondegenerate Ge with a proper resistance-area product for efficient spin injection and detection Article 10.1063/1.3454276 1 APPLIED PHYSICS LETTERS, v.97, no.2 APPLIED PHYSICS LETTERS 97 2 scie scopus 000279999800030 2-s2.0-77955148842 Physics, Applied Physics Article SILICON FUTURE