Choi, June Whan Yoon, Ho Gyu Kim, Jai Kyeong 2024-01-20T19:04:46Z 2024-01-20T19:04:46Z 2021-09-02 2010-06 1566-1199 https://pubs.kist.re.kr/handle/201004/131424 The work presented here focuses on the preparation and characterization of gate dielectrics in organic thin-film transistors (OTFTs), fabricated by the sol-gel process. Hybrid dielectrics were prepared with acryl UV resin, titanium n-butoxide, catalytic HCl, and acetylacetone by sol-gel process and patterned by UV cross-linking below 120 degrees C. Leakage currents of dielectric layers remained below 10 (9) A under operating voltage and dielectric constants were measured to be similar to 6.5 at 10 kHz. The field effect mobility and on-off ratio were similar to 0.86 cm(2)/V s and similar to 10(4), respectively. These results demonstrate that sol-gel hybrid systems are suitable for gate dielectrics in OTFTs. (C) 2010 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV LOW-VOLTAGE ORGANIC TRANSISTORS INSULATOR OTFTs using hybrid films as gate dielectrics prepared via UV curing and sol-gel reaction Article 10.1016/j.orgel.2010.03.011 1 ORGANIC ELECTRONICS, v.11, no.6, pp.1145 - 1148 ORGANIC ELECTRONICS 11 6 1145 1148 scie scopus 000277935200026 2-s2.0-78349308195 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article LOW-VOLTAGE ORGANIC TRANSISTORS INSULATOR Organic thin-film transistors OTFTs Organic-inorganic hybrid materials Hybrid gate insulators Sol-gel materials Pentacene organic semiconductor