Lee, Young Mi Park, Yongsup Sun, Chang-Woo Lee, Jeong Yong Shin, Hyun Joon Kim, Yong Tae Jung, Min-Cherl 2024-01-20T19:04:59Z 2024-01-20T19:04:59Z 2021-09-02 2010-05-31 0040-6090 https://pubs.kist.re.kr/handle/201004/131435 We investigated the chemical states of InTe thin film in the structural phase transition from the amorphous to the crystalline phase, using high-resolution X-ray photoelectron spectroscopy with synchrotron radiation. We confirmed the structural phase transition by transmission electron microscopy. Clean amorphous InTe (a-InTe) free of oxygen impurity was obtained after Ne+ ion sputtering at the ion beam energy of 1 kV for 1 h. Additionally, we obtained crystalline InTe (c-InTe) from clean a-InTe by annealing at 250 degrees C in an ultra-high vacuum. During the transition to the crystalline phase, the binding energy of the Te 4d core-level was unchanged, but the peak width was somewhat wider than in the amorphous phase. In the case of the In 4d core-level, the chemical shift was 0.1 eV at the higher binding energy between the amorphous and crystalline phases. The valence band maximum was shifted at the higher binding energy of 0.34 eV. We assumed that the Te atom was almost fixed and that the In atoms moved in the tight binding energy state to the center of the 4-Te atoms. (C) 2010 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA High-resolution X-ray photoelectron spectroscopy study of InTe thin film in structural phase transition from amorphous to crystalline phase Article 10.1016/j.tsf.2010.02.013 1 THIN SOLID FILMS, v.518, no.15, pp.4442 - 4445 THIN SOLID FILMS 518 15 4442 4445 scie scopus 000278242000067 2-s2.0-77953137736 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article Indium telluride Chemical state Structural phase transition X-ray photoelectron spectroscopy