김광천 이차헌 최원철 김현재 김진상 2024-01-20T19:30:26Z 2024-01-20T19:30:26Z 2021-09-06 2010-05 1225-5475 https://pubs.kist.re.kr/handle/201004/131460 The liquid phase epitaxy(LPE) method was widely used to growth of mercury cadmium telluride(MCT) thin films. However, this method lead to Hg-vacancies in MCT thin film, because Hg has high vapor pressure at this temperature range. This is a well known defect in HgCdTe grown by LPE method. In this study, we report the development of techniques for improving the crystalline quality and controlling the composite uniformity of HgCdTe thin films using high- pressure Hg-ambient annealing method. As a result, we achieved the improvement of the composite uniformity of HgCdTe thin films. It was observed by the high angle annular dark field scanning TEM(HAADF-STEM) analysis. Moreover, new HgTe phase and a shrinking of lattice fringe were observed. Korean 한국센서학회 Hg 분위기 열처리에 따른 적외선 감지용 Hg0.7Cd0.3Te 박막의구조적 특성 변화 Effect of Hg-ambient annealing on Hg0.7Cd0.3Te thin films for IR detector Article 2 센서학회지, v.19, no.5, pp.398 - 402 센서학회지 19 5 398 402 kci ART001482810 HgCdTe Hg-ambient annealing Te-precipitation