정유진 조경철 김승한 이상렬 2024-01-20T19:30:30Z 2024-01-20T19:30:30Z 2021-09-06 2010-05 1226-7945 https://pubs.kist.re.kr/handle/201004/131464 Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage(Vth) of a-IGZO TFTs. Interestingly, the Vth value of the oxide TFTs are slightly shifted in the positive direction due to increasing O2 partial pressure from 0.007 to 0.009 mTorr. The device performance is significantly affected by varying O2 ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction. Korean 한국전기전자재료학회 공정 변수에 따른 비정질 인듐갈륨징크옥사이드 산화물 반도체 트랜지스터의 전기적 특성 연구 Study on the Electrical Properties of a-IGZO TFTs Depending on Processing Parameters Article 2 전기전자재료학회논문지, v.23, no.5, pp.349 - 352 전기전자재료학회논문지 23 5 349 352 kci ART001443322 a-IGZO Oxide semiconductor Partial pressure Transistor Threshold voltage a-IGZO Oxide semiconductor Partial pressure Transistor Threshold voltage