Oh, Do-Hyun Cho, Woon-Jo Son, Dong Ick Kim, Tae Whan 2024-01-20T19:31:51Z 2024-01-20T19:31:51Z 2021-09-01 2010-05 1533-4880 https://pubs.kist.re.kr/handle/201004/131528 ZnO nanoparticles embedded in a Si3N4 layer by using spin-coating and thermal treatment were fabricated to investigate the feasible applications in charge trapping regions of the metal/oxide/nitride/oxide/p-Si memory devices. The magnitude of the flatband voltage shift of the capacitance-voltage (C-V) curve for the Al/SiO2/ZnO nanoparticles embedded in Si3N4 layer/SiO2/p-Si memory device was larger than that of Al/ZnO nanoparticles embedded in SiO2 layer/p-Si and Al/SiO2/Si3N4/SiO2/P-Si devices. The increase in the flatband voltage shift of the C-V curve for the Al/SiO2/ZnO nanoparticles embedded in Si3N4 layer/SiO2/p-Si memory device in comparison with other devices was attributed to the existence of the ZnO nanoparticles or the interface trap states between the ZnO nanoparticles and the Si3N4 layer resulting from existence of ZnO nanoparticles embedded in the Si3N4 layer. English AMER SCIENTIFIC PUBLISHERS SILICON NANOCRYSTALS CONFINEMENT Enhancement of the Memory Effects for Nonvolatile Memory Devices Fabricated Utilizing ZnO Nanoparticles Embedded in a Si3N4 Layer Article 10.1166/jnn.2010.2272 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.10, no.5, pp.3508 - 3511 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 10 5 3508 3511 scie scopus 000275626200104 2-s2.0-77955000705 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article; Proceedings Paper SILICON NANOCRYSTALS CONFINEMENT ZnO Nanoparticle Si3N4 MONOS Memory Effects