Chong, Eugene Jo, Kyoung Chul Lee, Sang Yeol 2024-01-20T19:32:11Z 2024-01-20T19:32:11Z 2021-09-02 2010-04-12 0003-6951 https://pubs.kist.re.kr/handle/201004/131544 Time dependence of the threshold voltage (V-th) shift in amorphous hafnium-indium-zinc oxide (a-HIZO) thin film transistor has been reported under on-current bias temperature stress measured at 60 degrees C. X-ray photoelectron spectroscopy results show the decrease in oxygen vacancies by Hf metal cations in a-HIZO systems after annealing process. High stability of a-HIZO systems has been observed due to low charge injection from the channel layer. Hf metal cations have been effectively incorporated into the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation. English AMER INST PHYSICS High stability of amorphous hafnium-indium-zinc-oxide thin film transistor Article 10.1063/1.3387819 1 APPLIED PHYSICS LETTERS, v.96, no.15 APPLIED PHYSICS LETTERS 96 15 scie scopus 000276794100033 2-s2.0-77951531173 Physics, Applied Physics Article amorphous semiconductors annealing charge injection hafnium compounds indium compounds thin film transistors vacancies (crystal) X-ray photoelectron spectra