김광천 정규호 유현우 임주혁 김현재 김진상 2024-01-20T19:32:37Z 2024-01-20T19:32:37Z 2021-10-21 2010-04 1226-7945 https://pubs.kist.re.kr/handle/201004/131565 We have investigated growth of CdTe thin films by using (As, GaAs) buffer layers for application of large scale IR focal plane arrays(IFPAs). Buffer layers were grown by molecular beam epitaxy(MBE), which reduced the lattice mismatch of CdTe/Si and prevented native oxide on Si substrates. CdTe thin films were grown by metal organic chemical deposition system(MOCVD). As a result, polycrystalline CdTe films were grown on Si(100) and arsenic coated-Si(100) substrate. In other case, single crystalline CdTe(400) thin film was grown on GaAs coated？Si(100) substrate. Moreover, we observed hillock structure and mirror like surface on the (400) orientated epitaxial CdTe thin film. Korean 한국전기전자재료학회 MOCVD를 이용한 대면적 CdTe 단결정 박막성장 Growth of Large Scale CdTe(400) Thin Films by MOCVD Article 2 전기전자재료학회논문지, v.23, no.4, pp.343 - 346 전기전자재료학회논문지 23 4 343 346 kci ART001435351 MOCVD CdTe thin film Buffer layer