Wu, Zhe Lee, Suyoun Park, Young-Wook Ahn, Hyung-Woo Jeong, Doo Seok Jeong, Jeung-hyun No, Kwangsoo Cheong, Byung-ki 2024-01-20T19:33:44Z 2024-01-20T19:33:44Z 2021-09-02 2010-03-29 0003-6951 https://pubs.kist.re.kr/handle/201004/131619 Ge-doped SbTe (Ge-ST) was compared with Ge2Sb2Te5 (GST) for its potential use in the phase-change memory with improved stability at varying ambient temperature (T-A). Device characteristics such as RESET current, RESET resistance, and SET resistance of Ge-ST devices were found to vary significantly less with T-A than those of GST devices. From measured carrier density, mobility, and optical band gaps, these findings are interpreted to derive from a metallic nature of the crystalline Ge-ST in contrast with a semiconducting nature of the crystalline GST as well as a relatively weaker covalent bonding in amorphous Ge-ST. English AMER INST PHYSICS Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature Article 10.1063/1.3374334 1 APPLIED PHYSICS LETTERS, v.96, no.13 APPLIED PHYSICS LETTERS 96 13 scie scopus 000276275300078 2-s2.0-77950505005 Physics, Applied Physics Article amorphous semiconductors antimony compounds carrier density carrier mobility energy gap germanium germanium compounds optical constants phase change memories