Lee, Jeong Hoon Hwang, Kyo Seon Kim, Tae Song 2024-01-20T19:34:13Z 2024-01-20T19:34:13Z 2021-09-02 2010-03-01 0003-6951 https://pubs.kist.re.kr/handle/201004/131643 In this study, we analyzed the microstress of Pb(Zr0.52Ti0.48)O-3 (PZT) films using Raman spectrum and the macrostress using the wafer curvature method. Based on the stress analysis, we also determined the relationship between the residual stress and piezoelectric properties. We found that a thickness of 1 mu m was critical since the stress relaxation starts due to surface roughening. Similarly, the film thickness dependence of the piezoelectric coefficient had saturation values around 1 mu m, where the preferred orientation started to change from (111) to (110), indicating that the piezoelectric response was related to the stress relaxation with a preferred orientation change. English AMER INST PHYSICS PB(ZR0.53TI0.47)O-3 THIN-FILMS STRESS ORIENTATION Microstress relaxation effect of Pb(Zr0.52Ti0.48)O-3 films with thicknesses for micro/nanopiezoelectric device Article 10.1063/1.3330897 1 APPLIED PHYSICS LETTERS, v.96, no.9 APPLIED PHYSICS LETTERS 96 9 scie scopus 000275246200053 2-s2.0-77949348522 Physics, Applied Physics Article PB(ZR0.53TI0.47)O-3 THIN-FILMS STRESS ORIENTATION internal stresses lead compounds micromechanics piezoelectric materials piezoelectric thin films Raman spectra stress analysis stress relaxation surface roughness texture