Cho, Nam Gyu Kim, Dong Hun Kim, Ho-Gi Hong, Jae-Min Kim, Il-Doo 2024-01-20T19:34:20Z 2024-01-20T19:34:20Z 2021-09-01 2010-03-01 0040-6090 https://pubs.kist.re.kr/handle/201004/131649 We report on high mobility ZnO thin film transistors (TFTs) (<5 V), utilizing a room temperature grown MgO-Bi1.5Zn1.0Nb1.5O7 (BZN) composite gate insulator on a glass substrate. 30 mol% MgO added BZN composite gate insulators exhibited greatly enhanced leakage current characteristics (similar to<2 x 10(-8) A/cm(2) at 0.3 MV/cm) due to the high breakdown strength of MgO, while retaining an appropriate high-k dielectric constant of 32. The ZnO-TFTs with MgO-BZN composite gate insulators showed a high field-effect mobility of 37.2 cm(2)/Vs, a reasonable on-off ratio of 1.54x10(5), a subthreshold swing of 460 mV/dec, and a low threshold voltage of 1.7 V. (C) 2009 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA ROOM-TEMPERATURE DIELECTRICS Zinc oxide thin film transistors using MgO-Bi1.5Zn1.0Nb1.5O7 composite gate insulator on glass substrate Article 10.1016/j.tsf.2009.09.001 1 THIN SOLID FILMS, v.518, no.10, pp.2843 - 2846 THIN SOLID FILMS 518 10 2843 2846 scie scopus 000275920000047 2-s2.0-76049097865 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article ROOM-TEMPERATURE DIELECTRICS Zinc oxide Semiconductor Transistor Gate insulator Low voltage operation