Park, Ji-Ho Wakahara, Akihiro Okada, Hiroshi Furukawa, Yuzo Kim, Yong-Tae Chang, Ho-Jung Song, Jonghan Shin, Sangwon Lee, Jong-Han Sato, Shin-ichiro Ohshima, Takeshi 2024-01-20T19:34:39Z 2024-01-20T19:34:39Z 2021-09-05 2010-03 0021-4922 https://pubs.kist.re.kr/handle/201004/131664 Terbium (Tb) ions were implanted into Al0.35Ga0.65N epitaxial layers at room temperature to investigate ion-beam-induced damage and luminescence properties at various doses of 1 x 10(12)-2.8 x 10(16) Tb/cm(2). Rutherford backscattering spectrometry/channeling (RBS/channeling) reveals that ion-beam-induced damage level steeply increases and that the damage cannot be fully suppressed even after rapid thermal annealing at 1100 degrees C, when the dose exceeds 5 x 10(14) Tb/cm(2). However, cawthodoluminescence (CL) intensity related to Tb3+ transitions increased initially and saturated above a dose of 1 x 10(13) Tb/cm(2). Furthermore, transient decay time determined by time-resolved photoluminescence (TRPL) decreased faster and a fast decay component related to the formation of nonradiative Tb-defect complexes became dominant, as Tb ion dose increases. Therefore, the results suggest that Tb-related luminescence properties are much susceptible to defects and nonradiative defects, namely, Tb-defect complexes, are formed under low-dose conditions even at a very low structural defect density. (C) 2010 The Japan Society of Applied Physics English IOP PUBLISHING LTD EU-DOPED GAN RARE-EARTH IONS III-NITRIDES ALXGA1-XN EMISSION Study of Ion-Beam-Induced Damage and Luminescence Properties in Terbium-Implanted AlGaN Article 10.1143/JJAP.49.032401 1 JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.3 JAPANESE JOURNAL OF APPLIED PHYSICS 49 3 scie scopus 000276386100030 2-s2.0-77953966826 Physics, Applied Physics Article EU-DOPED GAN RARE-EARTH IONS III-NITRIDES ALXGA1-XN EMISSION Ion-Beam-Induced Damage Luminescence Properties Terbium AlGaN