Kim, Yong Hyun Lee, Kyung Seok Lee, Taek Sung Cheong, Byung-ki Seong, Tae-Yeon Kim, Won Mok 2024-01-20T19:35:11Z 2024-01-20T19:35:11Z 2021-09-02 2010-03 1567-1739 https://pubs.kist.re.kr/handle/201004/131691 Al doped ZnO (AZO) films were prepared by radio frequency (rf) magnetron sputtering with varying substrate temperature, working Ar gas pressure and rf power imposed on 2-inch ZnO-Al2O3 (2 wt%) target, and their electrical and structural properties together with the corresponding etching behavior in 0.5% HCl solution were examined The effect of rf power on the electrical and structural properties of AZO films was marginal, but in the case of working Ar gas pressure and substrate temperature, substantial variations in the electrical and structural properties were observed The optimum electrical properties were obtained for AZO film deposited at 150 C in lowest working pressure of 1 2 mTorr The behavior of crater formation upon etching varied significantly depending on the structure of the film, and it was shown that the etching rate could be expressed inversely proportional function of the crystallinity represented as (002) peak intensity Also, for films with similar crystallinity, ie (002) peak intensity, dense structured Film deposited at high temperature had much lower etching rate than open structured films deposited under high working Ar gas pressure (C) 2009 Elsevier B V All rights reserved English ELSEVIER ZINC-OXIDE TRANSPARENT SUBSTRATE Electrical, structural and etching characteristics of ZnO:Al films prepared by rf magnetron Article 10.1016/j.cap.2009.11.061 1 CURRENT APPLIED PHYSICS, v.10, pp.S278 - S281 CURRENT APPLIED PHYSICS 10 S278 S281 scie scopus kci ART001488239 000276944500066 2-s2.0-77949570321 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article; Proceedings Paper ZINC-OXIDE TRANSPARENT SUBSTRATE Transparent conducting oxide Al doped ZnO Magnetron sputtering Etching