Song, Y. Y. Park, K. H. Park, K. S. Oh, S. K. Kang, H. J. Yang, D. S. Shin, S. W. Song, J. H. 2024-01-20T20:00:59Z 2024-01-20T20:00:59Z 2022-01-25 2010-02 0374-4884 https://pubs.kist.re.kr/handle/201004/131729 Eighty-keV Co ions with a dose of 3 x 10(16) ions/cm(2) were implanted into high-quality 0.5-min-thick ZnO (0001) single crystals with very low carrier concentration of n = 2.0 x 10(13)/cm(3). The implanted samples were post-annealed at 700, 800, and 900 degrees C by rapid thermal annealing in a N-2 atmosphere. The structural, magnetic, and transport properties of Co-ion-implanted ZnO were investigated. The Co X-edge, extended X-ray absorption fine structure analysis revealed the coexistence of Co-Co and Co-Zn bonds. The Co ions substituted into Zn sites form Zn1-xCoxO. Magnetoresistance (MR) data showed a sign change from positive to negative between 50 K and 77 K. A strong negative anomalous Hall effect (SNAHE) was observed in the temperature range with a positive MR. The sign change in the observed SNAHE seems to support the theory of Burkov and Balents. English KOREAN PHYSICAL SOC Observation of the Strong Negative Anomalous Hall Effect in Co-ion-implanted ZnO Single Crystals Article 10.3938/jkps.56.562 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.2, pp.562 - 566 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 56 2 562 566 N scie scopus kci ART001429180 000274807100007 2-s2.0-77954836036 Physics, Multidisciplinary Physics Article TRANSITION Diluted magnetic semiconductor Anomalous Hall effect Magnetoresistance EXAFS SQUID