Lim, J. Y. Song, J. D. Choi, W. J. Yang, H. S. 2024-01-20T20:01:45Z 2024-01-20T20:01:45Z 2021-09-02 2010-02 1862-6300 https://pubs.kist.re.kr/handle/201004/131766 The purpose of this work is to find optimal conditions for the growth of three-dimensional (3D) InAs islands on (2 x 1) (001) Si substrate using modified Stranski-Krastanow (S-K) method. From the analysis of atomic-force-microscopy (AFM) images and reflection-high-energy-electron-diffraction (RHEED) patterns, we have found that InAs islands can be grown on Si when the growth temperature is in the range of 370-430 degrees C and also when In-injection of more than three periods is used. At the growth temperature of 390 degrees C and In-injection of four periods, uniform distribution of islands with the highest density of about 600/mu m(2) were obtained. The average width and height of these islands were 36.1 +/- 9.2 nm and 6.2 +/- 2.0 nm, respectively. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim English WILEY-V C H VERLAG GMBH SHORT-PERIOD SUPERLATTICES MOLECULAR-BEAM EPITAXY QUANTUM DOTS OPTICAL-PROPERTIES GAAS TEMPERATURE Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate Article 10.1002/pssa.200925475 1 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.207, no.2, pp.391 - 395 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 207 2 391 395 scie scopus 000275148400026 2-s2.0-76949100170 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article SHORT-PERIOD SUPERLATTICES MOLECULAR-BEAM EPITAXY QUANTUM DOTS OPTICAL-PROPERTIES GAAS TEMPERATURE InAs Si quantum dots