Jang, Ho Won Ryu, Seong Wook Yu, Hak Ki Lee, Sanghan Lee, Jong-Lam 2024-01-20T20:02:03Z 2024-01-20T20:02:03Z 2021-09-01 2010-01-15 0957-4484 https://pubs.kist.re.kr/handle/201004/131779 We report effective methods for improving light extraction efficiency for n-side-up vertical InGaN light-emitting diodes (LEDs). For the LEDs with high reflectance Ag-based p-contacts, nanotexturing of the n-GaN surface using a combination of photonic crystals and photochemical etching drastically enhances the efficiency of extraction from the top surface. In contrast, the LEDs with low reflectance Au-based p-contacts show significantly less improvement through the nanotexturing. These experimental results indicate the critical role of high reflectance p-contacts as well as surface texturing in improving the light extraction efficiency of the vertical LEDs for solid-state lighting. English IOP PUBLISHING LTD EFFICIENCY BLUE The role of reflective p-contacts in the enhancement of light extraction in nanotextured vertical InGaN light-emitting diodes Article 10.1088/0957-4484/21/2/025203 1 NANOTECHNOLOGY, v.21, no.2 NANOTECHNOLOGY 21 2 scie scopus 000272641800005 2-s2.0-71549141354 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article EFFICIENCY BLUE Light-emitting diodes Nanotexturing Reflective contacts Extraction efficiency