Lee, Suyoun Jeong, Doo Seok Jeong, Jeung-hyun Zhe, Wu Park, Young-Wook Ahn, Hyung-Woo Cheong, Byung-ki 2024-01-20T20:02:05Z 2024-01-20T20:02:05Z 2021-09-02 2010-01-11 0003-6951 https://pubs.kist.re.kr/handle/201004/131781 We investigated the temperature dependence of the threshold switching characteristics of a memory-type chalcogenide material, Ge2Sb2Te5. We found that the threshold voltage (V-th) decreased linearly with temperature, implying the existence of a critical conductivity of Ge2Sb2Te5 for its threshold switching. In addition, we investigated the effect of bias voltage and temperature on the delay time (t(del)) of the threshold switching of Ge2Sb2Te5 and described the measured relationship by an analytic expression which we derived based on a physical model where thermally activated hopping is a dominant transport mechanism in the material. English AMER INST PHYSICS PHASE-CHANGE MEMORIES AMORPHOUS-SEMICONDUCTORS CHALCOGENIDE GLASSES THIN-FILMS MECHANISM A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5 Article 10.1063/1.3275756 1 APPLIED PHYSICS LETTERS, v.96, no.2 APPLIED PHYSICS LETTERS 96 2 scie scopus 000273689400063 2-s2.0-74549192781 Physics, Applied Physics Article PHASE-CHANGE MEMORIES AMORPHOUS-SEMICONDUCTORS CHALCOGENIDE GLASSES THIN-FILMS MECHANISM antimony compounds chalcogenide glasses germanium compounds hopping conduction tellurium compounds