Park, Young-wook Lee, Hyun Seok Ahn, Hyung Woo Wu, Zhe Lee, Suyoun Jeong, Jeung-hyun Jeong, Doo Seok Yi, Kyung-woo Cheong, Byung-ki 2024-01-20T20:02:40Z 2024-01-20T20:02:40Z 2021-09-05 2010-01 1567-1739 https://pubs.kist.re.kr/handle/201004/131811 Using Ge-doped SbTe (Ge-ST) materials of a fixed Sb:Te ratio (similar to 4.4), we investigated the effects of Ge addition (0 -13.1 at.%) with a particular regard to the possibility of achieving highly fast and reliable programming characteristics of a phase-change memory device. From material characterization, we found that a higher Ge content led to the enhanced stability of the amorphous phase state and retarded nucleation of crystallites but the growth of crystallites remained very fast regardless of Ge content. Consistent with these findings, examination of device characteristics revealed that, with increasing Ge content up to 13.1 at.%, we could make a RESET programming more reliable by slower melt-quenching while maintaining a very high SET speed. The reliable RESET programming is considered as due to decreased driving force for recrystallization resulting from increased stability of the amorphous phase state. (C) 2009 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV EUTECTIC SB70TE30 FILMS TRANSITION CHARACTERISTICS PROSPECTS ALLOYS The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe Article 10.1016/j.cap.2009.12.019 1 CURRENT APPLIED PHYSICS, v.10, no.1, pp.E79 - E82 CURRENT APPLIED PHYSICS 10 1 E79 E82 scie scopus kci 000278635400020 2-s2.0-77649239041 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article; Proceedings Paper EUTECTIC SB70TE30 FILMS TRANSITION CHARACTERISTICS PROSPECTS ALLOYS Phase-change memory Ge-doped SbTe Ge content Recrystallization