Lee, Dongbok Kang, Dongmin Kwon, Min-Ho Jun, Hyun-Goo Kim, Ki-Bum Lyeo, Ho-Ki Lee, Hyun-Suk Cheong, Byung-ki 2024-01-20T20:03:12Z 2024-01-20T20:03:12Z 2021-09-04 2010-01 1567-1739 https://pubs.kist.re.kr/handle/201004/131838 The dynamics of the melt-quenched amorphization in TiOx mixed Ge2Sb2Te5 films were studied using real-time reflectivity measurements with a nanosecond laser pulse and various amounts of TiOx. It was observed that the laser-power required for amorphization was significantly reduced by 27% when 9.1 mol% of TiOx was incorporated with Ge2Sb2Te5. The lowering of the thermal conductivity of the films, due to the increase in the number of interface between the Ge2Sb2Te5 and TiOx phases, led to an increase in the thermal efficiency. Such enhanced thermal efficiency is of great technological importance in phase change storage applications. (C) 2010 Elsevier B.V. All rights reserved. English ELSEVIER PHASE-TRANSITION CHARACTERISTICS THIN-FILMS Enhanced thermal efficiency for amorphization in nano-structured Ge2Sb2Te5-TiOx films Article 10.1016/j.cap.2009.12.020 1 CURRENT APPLIED PHYSICS, v.10, no.1, pp.E83 - E86 CURRENT APPLIED PHYSICS 10 1 E83 E86 scie scopus kci 000278635400021 2-s2.0-77649239179 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article; Proceedings Paper PHASE-TRANSITION CHARACTERISTICS THIN-FILMS Ge2Sb2Te5 Ge2Sb2Te5-TiOx Amorphization Laser melting