Kim, Kyou-Hyun Seo, Jong-Hyun Yoon, Sang-Won Lee, Kon-Bae Whang, Jin-Ha Ahn, Jae-Pyoung 2024-01-20T20:03:42Z 2024-01-20T20:03:42Z 2021-09-05 2009-12-30 0217-9849 https://pubs.kist.re.kr/handle/201004/131862 The nucleation and growth behaviors of undoped and phosphorus doped polycrystalline Si thin films were investigated by in-situ TEM observations. Polycrystalline Si thin films were partially changed to amorphous by ion implantations. A normal grain growth was observed in the undoped Si thin films during heating. On the other hand, the P-doped sample showed the recovery and growth at grain boundary as well as the nucleation of Si nanocrystals at amorphous regions. Although the amorphous hindered the grain growth and acted as the nucleation source of Si nanocrystals at lower temperature, the final grain size of polycrystalline Si at 650 degrees C was larger in the P-doped sample. The carrier mobility of the P-doped Si thin films not only increased with heat treatments, but also was corresponding to the microstructural evolution. English WORLD SCIENTIFIC PUBL CO PTE LTD CHEMICAL-VAPOR-DEPOSITION SILICON FILMS IN-SITU TEM INVESTIGATION ON NUCLEATION AND GROWTH BEHAVIOR OF P-DOPED Si THIN FILMS Article 10.1142/S0217984909021788 1 MODERN PHYSICS LETTERS B, v.23, no.31-32, pp.3747 - 3751 MODERN PHYSICS LETTERS B 23 31-32 3747 3751 scie scopus 000273141400009 2-s2.0-73649098003 Physics, Applied Physics, Condensed Matter Physics, Mathematical Physics Article; Proceedings Paper CHEMICAL-VAPOR-DEPOSITION SILICON FILMS Si TFT in-situ heating P doping carrier mobility nucletion