Leem, Jae-Hyeon Lee, Deuk-Hee Lee, Sang Yeol 2024-01-20T20:03:57Z 2024-01-20T20:03:57Z 2021-09-05 2009-12-15 0040-6090 https://pubs.kist.re.kr/handle/201004/131874 N-doped ZnO thin films have been grown on sapphire substrates by dielectric barrier discharged pulsed laser deposition (DBD-PLD). Low temperature photoluminescence spectra of N-doped ZnO film verified the p-type doping status to find the acceptor-bound exciton peaks with the high resolution detection. At low temperature growth, the major defects in the N-doped ZnO film were the oxygen interstitials that can combine with N, so that the N played the role as an acceptor. On the other hand, the major defects in the samples processed at high temperature were oxygen vacancies with which N doesn't play the role as an acceptor. The acceptor binding energy of N acceptor was estimated to be about 105 meV. (C) 2009 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA THIN-FILMS PHOTOLUMINESCENCE EPITAXY Properties of N-doped ZnO grown by DBD-PLD Article 10.1016/j.tsf.2009.07.202 1 THIN SOLID FILMS, v.518, no.4, pp.1238 - 1240 THIN SOLID FILMS 518 4 1238 1240 scie scopus 000272733200049 2-s2.0-71649099585 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper THIN-FILMS PHOTOLUMINESCENCE EPITAXY ZnO N-doping DBD PLD Photoluminescence