Kim, Ungkil Park, Tae-Eon Kim, Ilsoo Seong, Han-Kyu Kim, Myeong-Ha Chang, Joonyeon Park, Jae-Gwan Choi, Heon-Jin 2024-01-20T20:04:05Z 2024-01-20T20:04:05Z 2021-09-05 2009-12-15 0021-8979 https://pubs.kist.re.kr/handle/201004/131880 Semiconductors doped with magnetic ion, the so-called diluted magnetic semiconductors, are promising candidates for spintronics. Herein, we report on magnetic anisotropy in Mn:Ge diluted magnetic semiconductor nanowires. We grew single crystal Mn:Ge nanowires vertically on a Ge substrate and found the anisotropy in ratios of orbital to spin magnetic moments in the angle-dependent x-ray magnetic circular dichroism measurements. Our further characterization indicates that this anisotropy comes from the unique characteristics of nanowires, i.e., very high aspect ratio in their shape and tensile stress along the longitudinal direction, which confine the spins along the longitudinal direction and make an easy axis in that direction. English AMER INST PHYSICS CIRCULAR-DICHROISM MOMENT Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires Article 10.1063/1.3267047 1 JOURNAL OF APPLIED PHYSICS, v.106, no.12 JOURNAL OF APPLIED PHYSICS 106 12 scie scopus 000273216500050 2-s2.0-73849101314 Physics, Applied Physics Article CIRCULAR-DICHROISM MOMENT elemental semiconductors germanium magnetic anisotropy magnetic circular dichroism magnetic moments magnetoelectronics manganese nanowires semiconductor quantum wires semimagnetic semiconductors