Yoon, J. J. Ghong, T. H. Byun, J. S. Kang, Y. J. Kim, Y. D. Kim, H. J. Chang, Y. C. Song, J. D. 2024-01-20T20:30:24Z 2024-01-20T20:30:24Z 2021-09-05 2009-11-30 0169-4332 https://pubs.kist.re.kr/handle/201004/131951 Using a spectroscopic ellipsometry, pseudodielectric functions <epsilon > of InxAl1-xAs ternary alloy films (x = 0.43, 0.62, 0.75, and 1.00) from 0.74 to 6.48 eV were determined. Fast in-situ chemical etching to effectively remove surface overlayers using charge-coupled device detector and to avoid the reoxidation of the surface of films prior to the ellipsometric spectrum measurement was performed. At the high energy region, an additional critical point structure which is interpreted as the E-1&apos; transition from the band structure calculation of the linear augmented Slater-type orbital method was reported. (C) 2009 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV OPTICAL-PROPERTIES DIELECTRIC FUNCTION INP ALXGA1-XAS PARAMETERS FILMS Observation of new critical point in InxAl1-xAs alloy using spectroscopic ellipsometry Article 10.1016/j.apsusc.2009.01.088 1 APPLIED SURFACE SCIENCE, v.256, no.4, pp.1031 - 1034 APPLIED SURFACE SCIENCE 256 4 1031 1034 scie scopus 000272342300028 2-s2.0-70749141836 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article; Proceedings Paper OPTICAL-PROPERTIES DIELECTRIC FUNCTION INP ALXGA1-XAS PARAMETERS FILMS Ellipsometry InAlAs Dielectric function Band calculation LASTO