Lee, Tae Hwan Koo, Hyun Cheol Kim, Kyung Ho Kim, Hyung-Jun Chang, Joon Yeon Han, Suk-Hee Hong, Jinki Lim, Sang Ho 2024-01-20T20:31:17Z 2024-01-20T20:31:17Z 2021-09-05 2009-11 0304-8853 https://pubs.kist.re.kr/handle/201004/131994 The electrical spin injection from Fe into an n-doped GaAs channel through Schottky-tunnel-barrier is observed from 1.8 K to room temperature. The magnitude of local spin valve signal (Delta R/R-0) decreases as the temperature increases. In each temperature, we calculated the injected polarization (eta) considering the spin drift effect induced by the electric field. The interfacial polarizations of 19.3% and 12.6% are acquired for Fe/GaAs junction at T = 1.8 and 300 K, respectively. The temperature dependence of spin injection efficiency is matched with interface resistance variation. As the temperature increases, Schottky-tunnel-barrier property is diminished so that the spin injection efficiency would be reduced. (C) 2009 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV SEMICONDUCTOR TRANSPORT DIFFUSION Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure Article 10.1016/j.jmmm.2009.07.037 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.321, no.22, pp.3795 - 3798 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 321 22 3795 3798 scie scopus 000269720200026 2-s2.0-69549130896 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article SEMICONDUCTOR TRANSPORT DIFFUSION Spin injection Spin injection efficiency Interface resistance Schottky-tunnel-barrier