Shin, Il-Jae Min, Byoung-Chul Hong, Jin Pyo Shin, Kyung-Ho 2024-01-20T20:31:21Z 2024-01-20T20:31:21Z 2021-09-05 2009-11 0003-6951 https://pubs.kist.re.kr/handle/201004/131998 We study the effect of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by high-temperature in situ annealing above 400 degrees C, circumventing Mn diffusion conventionally caused by postannealing process. The high temperature in situ annealing leads to Ru diffusion at the CoFeB/Ru interfaces, and thereby results in a reduction in tunnel magnetoresistance (TMR). The minimization of Ru diffusion during the in situ annealing provides a large TMR of 294% at room temperature with an exchange-bias field of 280 Oe. In addition, the temperature and voltage dependence of TMR reveals that there is neither significant spin-exchange scattering nor severe impurity-assisted scattering in the MgO barrier. English AMER INST PHYSICS Effects of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by in situ annealing Article 10.1063/1.3268791 1 APPLIED PHYSICS LETTERS, v.95, no.22 APPLIED PHYSICS LETTERS 95 22 scie scopus 000272627600039 2-s2.0-71949130388 Physics, Applied Physics Article ROOM-TEMPERATURE MAGNETORESISTANCE diffusion high-temperature effects impurity scattering magnesium compounds magnetic impurities magnetic tunnelling ruthenium tunnelling magnetoresistance