Park, K. Choi, J. W. Kim, S. -J. Kim, G. H. Cho, Y. S. 2024-01-20T20:32:03Z 2024-01-20T20:32:03Z 2021-09-05 2009-10-19 0925-8388 https://pubs.kist.re.kr/handle/201004/132029 We prepared Zn1-xBixO (0 <= x <= 0.02) thermoelectric materials using the tape casting method and then studied their thermoelectric properties. The electrical conductivity of Zn1-xBixO decreased with an increase in Bi2O3 content The Seebeck coefficient values were negative over the entire temperature range (600-800 degrees C). i e., an n-type conduction. The highest absolute value of the Seebeck coefficient (484 mu V K-1) was obtained for Zn0.9975Bi0.0025O at 800 degrees C. We obtained a significantly enhanced thermoelectric power factor by adding Bi2O3. The highest power factor (3.06 x 10 (4) Wm(-1) K-2) was obtained for Zn0.9975Bi0.0025O at 800 degrees C This value was about six times higher than that of Bi2O3-free ZnO (0.54 x 10(-4) Wm(-1) K-2) at 800 degrees C. (C) 2009 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA AL-DOPED ZNO ZNO-BI2O3 CERAMICS THIN-FILMS SYSTEM OXIDE Zn1-xBixO (0 <= x <= 0.02) for thermoelectric power generations Article 10.1016/j.jallcom.2009.06.021 1 JOURNAL OF ALLOYS AND COMPOUNDS, v.485, no.1-2, pp.532 - 537 JOURNAL OF ALLOYS AND COMPOUNDS 485 1-2 532 537 scie scopus 000271542900116 2-s2.0-72049096347 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article AL-DOPED ZNO ZNO-BI2O3 CERAMICS THIN-FILMS SYSTEM OXIDE Oxide materials Thermoelectic materials Solid state reactions Ceramics Thermoelectric