Kim, Kyoung Chan Jang, Dong-Kie Lee, Jung Il Kim, Tae Geun Lee, Woo Won Kim, Jeong Ho Yang, Eun Jeong Koo, Bon Jo Han, Il Ki 2024-01-20T20:32:18Z 2024-01-20T20:32:18Z 2021-09-05 2009-10-01 1041-1135 https://pubs.kist.re.kr/handle/201004/132041 A wide-aperture ridge waveguide structure was applied to 1.3-m InGaAsP-InGaAsP multiple-quantum-well laser diodes (LDs) to increase their maximum kink-free output power under single-lateral-mode operations. As a result, a kink-free output power up to 140 mW and an external efficiency of 0.3 W/A were achieved from a single facet of the LD with a 7-mu m-wide ridge top and a 1.5-mm-long uncoated cavity. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC High-Power Single-Mode 1.3-m InGaAsP-InGaAsP Multiple-Quantum-Well Laser Diodes With Wide Apertures Article 10.1109/LPT.2009.2028153 1 IEEE PHOTONICS TECHNOLOGY LETTERS, v.21, no.19, pp.1438 - 1440 IEEE PHOTONICS TECHNOLOGY LETTERS 21 19 1438 1440 scie scopus 000270037200014 2-s2.0-70349590234 Engineering, Electrical & Electronic Optics Physics, Applied Engineering Optics Physics Article High-power single-mode laser diodes (LDs) multiple quantum well (MQW) wide aperture