Yoon, Jong Moon Kim, Eun Tae Lee, Jeong Yong Kim, Yong Tae 2024-01-20T20:33:22Z 2024-01-20T20:33:22Z 2021-09-05 2009-10 0021-4922 https://pubs.kist.re.kr/handle/201004/132094 The microstructure of Sb-Se-Te ternary alloy thin films annealed at 220, 230, and 300 degrees C by rapid thermal annealing (RTA) was investigated using high-resolution transmission election microscopy (HR-TEM) and X-ray diffraction (XRD) analysis. Compared to the T-m of Ge2Sb2Te5 (similar to 616 degrees C), the lower T-m of the Sb-Se-Te (417 degrees C) thin film can contribute toward reducing power consumption for the reset process of phase change materials. The horizontal long grains-grown along the interface in a fully crystallized Sb-Se-Te thin film sample and annealed at 300 degrees C for 10 min-were hexagonal structured Sb2SeTe2 with 15 layers; the c-axis was perpendicular to the substrate. (C) 2009 The Japan Society of Applied Physics English IOP PUBLISHING LTD ATOMIC-FORCE MICROSCOPY PHASE-CHANGE THIN-FILMS CHALCOGENIDE GLASSES GRAIN-GROWTH NONVOLATILE TRANSITIONS NUCLEATION Transmission Electron Microscopy Study on the Crystallization of Sb-Se-Te Ternary Alloys Article 10.1143/JJAP.48.105501 1 JAPANESE JOURNAL OF APPLIED PHYSICS, v.48, no.10 JAPANESE JOURNAL OF APPLIED PHYSICS 48 10 scie scopus 000271527100052 2-s2.0-77952692839 Physics, Applied Physics Article ATOMIC-FORCE MICROSCOPY PHASE-CHANGE THIN-FILMS CHALCOGENIDE GLASSES GRAIN-GROWTH NONVOLATILE TRANSITIONS NUCLEATION SbSeTe transmission electron microscopy