Tark, S. J. Ok, Y. -W. Kang, M. G. Lim, H. J. Kim, W. M. Kim, D. 2024-01-20T20:33:36Z 2024-01-20T20:33:36Z 2021-09-05 2009-10 1385-3449 https://pubs.kist.re.kr/handle/201004/132105 This study examined the effect of the hydrogen ratio on the electrical and optical properties of hydrogenated Al-doped zinc oxide (AZO) thin films deposited by rf magnetron sputtering using a ceramic target (98 wt% ZnO, 2 wt% Al2O3). Various AZO films on glass were prepared by changing the H-2/(Ar + H-2) ratio at room temperature. The AZO/H films showed a lower resistivity and a higher carrier concentration and mobility than the AZO films. However, the resistivity and mobility of the AZO/H films increased and decreased with increasing H-2 flow ratio, respectively. As a result, the AZO/H films grown with 2% H-2 addition showed excellent electrical properties with a resistivity of 4.98 x 10(4) Omega cm. The UV-measurements showed that the optical transmission of the AZO/H films was > 85% in the visible range with a wide optical band gap. In addition, the effect of H-2 flow ratio on the structure and composition of hydrogenated AZO thin films have also been studied. English SPRINGER TIN-OXIDE-FILMS THIN-FILMS ZINC-OXIDE CONDUCTIVITY DEPOSITION SUBSTRATE GROWTH Effect of a hydrogen ratio in electrical and optical properties of hydrogenated Al-doped ZnO films Article 10.1007/s10832-008-9532-0 1 JOURNAL OF ELECTROCERAMICS, v.23, no.2-4, pp.548 - 553 JOURNAL OF ELECTROCERAMICS 23 2-4 548 553 scie scopus 000271982300085 2-s2.0-73449144799 Materials Science, Ceramics Materials Science Article TIN-OXIDE-FILMS THIN-FILMS ZINC-OXIDE CONDUCTIVITY DEPOSITION SUBSTRATE GROWTH ZnO Al doping Hydrogenated rf magnetron sputtering