Cho, Kwang-Hwan Kang, Min-Gyu Kang, Chong-Yun Yoon, Seok-Jin Lee, YoungPak Kim, Jong-Hee Cho, Bong-Hee 2024-01-20T20:34:12Z 2024-01-20T20:34:12Z 2021-09-03 2009-10 0013-4651 https://pubs.kist.re.kr/handle/201004/132135 Polycrystalline Ba0.4Sr0.6TiO3 (BST) thin films grown at 350 degrees C with UV-assisted rapidly thermal annealing (RTA) showed a high-k value of 183 at 100 kHz. The 100 nm thick BST film with UV-assisted RTA exhibited a high capacitance density of 16.2 fF/mu m(2) and a low dissipation factor of 0.48% at 100 kHz with a low leakage current density of 1 X 10(-8) A/cm(2) at 0.5 MV/cm. The quadratic and linear voltage coefficients of capacitances of the BST film with UV-assisted RTA were -155 ppm/V-2 and 231 ppm/V, respectively. All these make the BST decoupling capacitor very suitable for use in radio-frequency circuits and mixed-signal integrated circuits. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3243858] English ELECTROCHEMICAL SOC INC MIM CAPACITORS THIN-FILMS PERFORMANCE Effect of UV-Assisted RTA on the Electrical Properties of (Ba,Sr)TiO3 Films for Low Temperature Embedding of Decoupling Capacitor Article 10.1149/1.3243858 1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.12, pp.G230 - G232 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156 12 G230 G232 scie scopus 000271218900053 2-s2.0-70350735896 Electrochemistry Materials Science, Coatings & Films Electrochemistry Materials Science Article MIM CAPACITORS THIN-FILMS PERFORMANCE