Kim, T. J. Yoon, J. J. Hwang, S. Y. Aspnes, D. E. Kim, Y. D. Kim, H. J. Chang, Y. C. Song, J. D. 2024-01-20T20:34:43Z 2024-01-20T20:34:43Z 2021-09-04 2009-09-14 0003-6951 https://pubs.kist.re.kr/handle/201004/132160 We report pseudodielectric-function spectra from 1.5 to 6.0 eV of InAsxSb1-x ternary alloys obtained by spectroscopic ellipsometry. Energies of the E-1, E-1+Delta(1), E'(0), E'(0)+Delta'(0), E-2, E-2+Delta(2), E'(2), E'(2)+Delta(2), and E'(1) critical points (CPs) were obtained from numerically calculated second derivatives, and identifications established by band-structure calculations using the linear augmented Slater-type orbital method. The E-2, E-2+Delta(2), E'(2), and E'(2)+Delta(2) CP structures cross with increasing As-composition. Two saddle-point transitions, Delta(cu)(5)-Delta(vu)(5) and Delta(cl)(5)-Delta(vu)(5), are found for InSb. (C) 2009 American Institute of Physics. [doi:10.1063/1.3216056] English AMER INST PHYSICS INSB GASB INAS GAAS GAP INP Interband transitions of InAsxSb1-x alloy films Article 10.1063/1.3216056 1 APPLIED PHYSICS LETTERS, v.95, no.11 APPLIED PHYSICS LETTERS 95 11 scie scopus 000270096900020 2-s2.0-70349506187 Physics, Applied Physics Article INSB GASB INAS GAAS GAP INP InAsSb Bandgap