이재상 구상모 이상렬 2024-01-20T20:35:09Z 2024-01-20T20:35:09Z 2021-09-06 2009-09 1226-7945 https://pubs.kist.re.kr/handle/201004/132181 The TFTs have been fabricated with 3 different geometry S/D electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and 25 μm) and channel lengths (70, 30, and 5 μm) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications. Korean 한국전기전자재료학회 산화물 박막 트랜지스터 동작에 대한 접촉 저항의 영향 Study on Contact Resistance on the Performance of Oxide Thin Film Transistors Article 2 전기전자재료학회논문지, v.22, no.9, pp.747 - 750 전기전자재료학회논문지 22 9 747 750 kci ART001372557 ZrO2 a-IGZO Thin film transistor