이득희 김상식 이상렬 임재현 2024-01-20T20:35:10Z 2024-01-20T20:35:10Z 2021-09-06 2009-09 1226-7945 https://pubs.kist.re.kr/handle/201004/132182 We described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The undoped ZnO thin films were grown on c-Al2O3 substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and 600oC, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement. Korean 한국전기전자재료학회 펄스 레이져 증착법으로 성장한 ZnO 박막의 마이크로 PL 특성 분석 Investigation on the Micro-photoluminescence of ZnO Thin Films Grown by Pulsed Laser Deposition Article 2 전기전자재료학회논문지, v.22, no.9, pp.756 - 759 전기전자재료학회논문지 22 9 756 759 kci ART001372593 ZnO Oxide semiconductor Thin films Pulsed laser deposition Photoluminescence