Koo, Hyun Cheol Kwon, Jae Hyun Eom, Jonghwa Chang, Joonyeon Han, Suk Hee Johnson, Mark 2024-01-20T21:00:47Z 2024-01-20T21:00:47Z 2021-09-04 2009-09 0036-8075 https://pubs.kist.re.kr/handle/201004/132212 Spintronics increases the functionality of information processing while seeking to overcome some of the limitations of conventional electronics. The spin-injected field effect transistor, a lateral semiconducting channel with two ferromagnetic electrodes, lies at the foundation of spintronics research. We demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure with empirically calibrated electrical injection and detection of ballistic spin-polarized electrons. We observed and fit to theory an oscillatory channel conductance as a function of monotonically increasing gate voltage. English American Association for the Advancement of Science Control of Spin Precession in a Spin-Injected Field Effect Transistor Article 10.1126/science.1173667 1 Science, v.325, no.5947, pp.1515 - 1518 Science 325 5947 1515 1518 N scie scopus 000269887900031 2-s2.0-70349318655 Multidisciplinary Sciences Science & Technology - Other Topics Article ELECTRICAL DETECTION ORBIT INTERACTION GATE CONTROL TRANSPORT HETEROSTRUCTURE ELECTRONS METALS VALVE gate control spin injection spin-FET