Oh, Eunsoon Lee, T. K. Park, J. H. Choi, J. H. Park, Y. J. Shin, K. H. Kim, K. Y. 2024-01-20T21:01:29Z 2024-01-20T21:01:29Z 2021-09-03 2009-08-15 0021-8979 https://pubs.kist.re.kr/handle/201004/132232 We fabricated spin light emitting diodes using oxide tunneling barriers between ferromagnetic materials (Ni0.8Fe0.2/Co0.9Fe0.1) and semiconductors (GaAs) and investigated the temperature-dependent carrier lifetime and spin relaxation time of the active GaAs layer. We observed the circular polarization of the free exciton from the electroluminescence spectra due to the spin injection from the ferromagnetic material, whereas the circular polarization of the conduction band to acceptor transition was negligible. From the temperature-dependent carrier lifetime and spin relaxation time of the active GaAs layer, we found that the spin injection efficiency was larger than 25% between 20 and 180 K, where the magnetic field dependence of the spin lifetime was ignored. 0 2009 American Institute of Physics. [DOI: 10.1063/1.3186026] English AMER INST PHYSICS QUANTUM-WELLS HETEROSTRUCTURE SEMICONDUCTOR Carrier lifetime and spin relaxation time study for electrical spin injection into GaAs Article 10.1063/1.3186026 1 JOURNAL OF APPLIED PHYSICS, v.106, no.4 JOURNAL OF APPLIED PHYSICS 106 4 scie scopus 000270083800030 2-s2.0-69749103876 Physics, Applied Physics Article QUANTUM-WELLS HETEROSTRUCTURE SEMICONDUCTOR Carrier lifetime spin relaxation time spin injection GaAs